The current gain of all types of the studied transistors decreased as a function of the total dose. This does not prevent the use of these devices in a radiative environment. Explain the biasing of Bipolar Junction Transistor (BJT). 2, 3783 (2020) for silicon bipolar junction transistors.
asked in General by Ritikgupta (38.5k points) electronic-devices bipolar-junction-transistor 0 votes. Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors. A distinct different bias dependences are found for damage factors (DF) of forward and reverse current gain.For reverse current gain, DF gradually decreases with the voltage across base-collector junction (V BC) increasing, until a saturated value is reached. Gamma Irradiation Performance Tests of the Bipolar Junction Transistor (BJT) for Medical Dosimetry Purposes. A bipolar junction transistor with forward current transfer ratio 0.98, when working in CE mode, provides current transfer. The influence of combined Co-60 gamma radiation total ionization dose (TID) and conducted electromagnetic interference (EMI) in bipolar transistors was studied. The BJTs were set at forward active bias during the entire irradiation processes to investigate the current gain degradation. The experimental results demonstrated that the base current increases under the influence of EMI, TID and combined TID with EMI due to the recombination currents in the emitter-base spacer of the transistor. The ideality factor n investigated showed that TID was approximately equal to 2 and the combination of TID and EMI was greater than 2. Meanwhile, the degradation quantity of the device current gain beta(TID) (+) (EMI) tested with combined TID and EMI irradiation was observed to be more severe than that of beta(TID) or beta(EMI) tested only with TID or EMI at low bias V-BE region ( ＜ 0.65 V). However, the degradation trends of the dc characteristics of the tested devices at high V-BE region ( ＞ 0.6 V) became smaller under different experimental conditions (EMI, TID, TID + EMI). Finally, the current gain degradation levels of the tested devices were compared (beta(TID+EMI) ＞ beta(TID) ＞ beta(EMI)). In high-power diodes gamma irradiation of 15 Mrad (Si) lead to a slight decrease of the leakage current at a reverse bias of 5 V. Irradiation impact of gamma rays and X-rays on bipolar junction transistors (BJTs) in terms of electronic excitation due to transfer of energy and. Radiation effects of 20 MeV Br on bipolar transistors are investigated in this work.
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